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CSD87334Q3D Fiches technique(PDF) 4 Page - Texas Instruments |
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CSD87334Q3D Fiches technique(HTML) 4 Page - Texas Instruments |
4 / 22 page CSD87334Q3D SLPS546 – JULY 2015 www.ti.com 5.5 Electrical Characteristics TA = 25°C (unless otherwise stated) Q1 CONTROL FET Q2 SYNC FET PARAMETER TEST CONDITIONS UNIT MIN TYP MAX MIN TYP MAX STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 µA 30 30 V Drain-to-source leakage IDSS VGS = 0 V, VDS = 20 V 1 1 µA current Gate-to-source leakage IGSS VDS = 0 V, VGS = +10 / –8 V 100 100 nA current Gate-to-source threshold VGS(th) VDS = VGS, IDS = 250 µA 0.75 0.90 1.20 0.75 0.90 1.20 V voltage VGS = 3.5 V, IDS = 12 A 6.3 8.3 6.3 8.3 RDS(on) Drain-to-source on resistance VGS = 4.5 V, IDS = 12 A 5.6 7.0 5.6 7.0 m Ω VGS = 8 V, IDS = 12 A 4.9 6.0 4.9 6.0 gfs Transconductance VDS = 15 V, IDS = 12 A 62 62 S DYNAMIC CHARACTERISTICS CISS Input capacitance 971 1260 971 1260 pF VGS = 0 V, VDS = 15 V, COSS Output capacitance 453 589 453 589 pF ƒ = 1 MHz CRSS Reverse transfer capacitance 16 21 16 21 pF RG Series gate resistance 1.0 2.0 1.0 2.0 Ω Qg Gate charge total (4.5 V) 6.4 8.3 6.4 8.3 nC Qgd Gate charge – gate to drain 1.0 1.0 nC VDS = 15 V, IDS = 12 A Qgs Gate charge – gate to source 1.9 1.9 nC Qg(th) Gate charge at Vth 0.9 0.9 nC QOSS Output charge VDS = 15 V, VGS = 0 V 10.5 10.5 nC td(on) Turn on delay time 4 4 ns tr Rise time 7 7 ns VDS = 15 V, VGS = 4.5 V, IDS = 12 A, RG = 2 Ω td(off) Turn off delay time 11 11 ns tf Fall time 17 17 ns DIODE CHARACTERISTICS VSD Diode forward voltage IDS = 12 A, VGS = 0 V 0.8 1.0 0.8 1.0 V Qrr Reverse recovery charge 23 23 nC VDS = 15 V, IF = 12 A, di/dt = 300 A/µs trr Reverse Recovery Time 18 18 ns Max RθJA = 75°C/W Max RθJA = 130°C/W when mounted on when mounted on 1 inch2 (6.45 cm2) of 2 minimum pad area of 2 oz. (0.071 mm thick) oz. (0.071 mm thick) Cu. Cu. 4 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD87334Q3D |
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Description similaire - CSD87334Q3D_15 |
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