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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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CSD88539ND Fiches technique(PDF) 5 Page - Texas Instruments |
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CSD88539ND Fiches technique(HTML) 5 Page - Texas Instruments |
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5 / 14 page  0 3 6 9 12 15 18 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 0.1 1 10 100 1000 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 10us 100us 1ms 10ms DC Single Pulse Max RthetaJL = 20ºC/W G001 1 10 100 0.01 0.1 1 TAV - Time in Avalanche (mS) TC = 25ºC TC = 125ºC G001 CSD88539ND www.ti.com SLPS456 – FEBRUARY 2014 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs Temperature Copyright © 2014, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Links: CSD88539ND |
Numéro de pièce similaire - CSD88539ND_15 |
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Description similaire - CSD88539ND_15 |
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