2SA1469_15 datasheet(2/4 Pages) JMNIC

No de pièce	2SA1469

Description	Silicon PNP Power Transistors

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Fabricant	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Site Internet	http://www.jmnic.com

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JMnic

Product Specification

2

Silicon PNP Power Transistors

2SA1469

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-1mA ;RBE=∞

-60

V

V(BR)CBO

Collector-base breakdown voltage

IC=-10mA ;IE=0

-80

V

V(BR)EBO

Emitter-base breakdown voltage

IE=-10mA ;IC=0

-5

V

VCEsat

Collector-emitter saturation voltage

IC=-2.5A IB=-0.125A

-0.4

V

ICBO

Collector cut-off current

VCB=-40V IE=0

-0.1

mA

IEBO

Emitter cut-off current

VEB=-4V; IC=0

-0.1

mA

hFE

DC current gain

IC=-1A ; VCE=-2V

70

280

fT

Transition frequency

IC=-1A ; VCE=-5V

100

MHz

Switching times

ton

Turn-on time

0.1

μs

ts

Storage time

0.5

μs

tf

Fall time

IC=-2.0A;IB1=-IB2=-0.1A

VCC=20V ,RL=10Ω

0.1

μs

hFE Classifications

Q

R

S

70-140

100-200

140-280

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2SA1469 Fiches technique(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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