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IRFE220 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRFE220
Description  Simple Drive Requirements
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFE220 Fiches technique(HTML) 2 Page - International Rectifier

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IRFE220, JANTX2N6790U
2
www.irf.com
For footnotes refer to the last page
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction to Case
8.93
RthJ-PCB
Junction to PC Board
26
Soldered to a copper clad PC board
°C/W
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
0.25
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.80
VGS = 10V, ID = 1.8A„
Resistance
VGS = 10V, ID = 2.8A„
VGS(th)
Gate Threshold Voltage
2.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
1.5
VDS > 15V, IDS = 1.8A„
IDSS
Zero Gate Voltage Drain Current
25
VDS = 160V, VGS = 0V
250
VDS = 160V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
14.3
VGS = 10V, ID = 2.8A
Qgs
Gate-to-Source Charge
3.0
nC
VDS = 100V
Qgd
Gate-to-Drain (‘Miller’) Charge
9.0
td(on)
Turn-On Delay Time
40
VDD = 74V, ID = 2.8A
tr
Rise Time
50
VGS = 10V, RG = 7.5Ω
td(off)
Turn-Off Delay Time
50
tf
Fall Time
50
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
260
VGS = 0V, VDS = 25V
Coss
Output Capacitance
100
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
30
nA
nH
ns
µA
Measured from the center of
drain pad to center of source
pad
S
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
2.8
ISM
Pulse Source Current (Body Diode)

——
11
VSD Diode Forward Voltage
1.5
V
Tj = 25°C, IS = 2.8A, VGS = 0V „
trr
Reverse Recovery Time
400
ns
Tj = 25°C, IF = 2.8A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
4.3
µC
VDD ≤ 50V „
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
0.85
4.0


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