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IRF9240 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF9240
Description  Simple Drive Requirements
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF9240 Fiches technique(HTML) 2 Page - International Rectifier

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IRF9240
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
1.0
RthJA
Junction-to-Ambient
30
soldered to a 2” square copper-clad board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
-11
ISM
Pulse Source Current (Body Diode) ➀
-44
VSD
Diode Forward Voltage
-4.6
V
Tj = 25°C, IS =-11A, VGS = 0V ➃
trr
Reverse Recovery Time
270
440
nS
Tj = 25°C, IF = -11A, di/dt ≤ -100A/µs
QRR
Reverse Recovery Charge
7.2
µC
VDD ≤ -50V ➃
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ
Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
-200
V
VGS = 0V, ID = -1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
-0.20
V/°C
Reference to 25°C, ID = -1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.5
VGS = -10V, ID = -7.0A➃
Resistance
0.58
VGS = -10V, ID = -11A ➃
VGS(th)
Gate Threshold Voltage
-2.0
-4.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
4.0
S ( )VDS > -15V, IDS = -7.0A ➃
IDSS
Zero Gate Voltage Drain Current
-25
VDS=-160V, VGS=0V
-250
VDS =-160V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
-100
VGS = -20V
IGSS
Gate-to-Source Leakage Reverse
1 0 0
VGS = 20V
Qg
Total Gate Charge
2 8
6 0
VGS =-10V, ID = -11A
Qgs
Gate-to-Source Charge
3.0
1 5
nC
VDS =-100V
Qgd
Gate-to-Drain (‘Miller’) Charge
4.5
3 8
td(on)
Turn-On Delay Time
3 5
VDD = -100V, ID = -11A,
t r
Rise Time
8 5
RG = 9.1Ω
td(off)
Turn-Off Delay Time
8 5
tf
Fall Time
6 5
LS + LD
Total Inductance
6.1
Ciss
Input Capacitance
1200
VGS = 0V, VDS = -25V
Coss
Output Capacitance
570
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
8 1
nA
nH
ns
µA
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)


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