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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF7749L1PBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7749L1PBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 10 page  2 www.irf.com © 2012 International Rectifier February 18, 2013 IRF7749L1TRPbF Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 60 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 1.1 1.50 mΩ VGS(th) Gate Threshold Voltage 2.0 2.9 4.0 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -10 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 280 ––– ––– S Qg Total Gate Charge ––– 200 300 Qgs1 Pre-Vth Gate-to-Source Charge ––– 36 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 12 ––– nC Qgd Gate-to-Drain Charge ––– 71 110 Qgodr Gate Charge Overdrive ––– 100 ––– See Fig. 9 Qsw Switch Charge (Qgs2 + Qgd) ––– 83 ––– Qoss Output Charge ––– 67 ––– nC RG Gate Resistance ––– 1.1 ––– Ω td(on) Turn-On Delay Time ––– 17 ––– tr Rise Time ––– 43 ––– td(off) Turn-Off Delay Time ––– 78 ––– ns tf Fall Time ––– 39 ––– Ciss Input Capacitance ––– 12320 ––– Coss Output Capacitance ––– 1810 ––– pF Crss Reverse Transfer Capacitance ––– 850 ––– Coss Output Capacitance ––– 8060 ––– Coss Output Capacitance ––– 1310 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 200 (Body Diode) A ISM Pulsed Source Current ––– ––– 800 (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 45 68 ns Qrr Reverse Recovery Charge ––– 78 120 nC MOSFET symbol RG=1.8Ω VDS = 25V Conditions VGS = 0V, VDS = 120V, f=1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VDS = 16V, VGS = 0V VDD = 30V, VGS = 10VÃi VGS = 0V ƒ = 1.0MHz ID = 120A VDS = VGS, ID = 250μA VDS = 60V, VGS = 0V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 2mA VGS = 10V, ID = 120A i TJ = 25°C, IF = 120A, VDD = 30V di/dt = 100A/μs i TJ = 25°C, IS = 120A, VGS = 0V i showing the integral reverse p-n junction diode. ID = 120A VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V VDS = 10V, ID = 120A VDS = 30V |
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