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IRF6785MPBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF6785MPBF
Description  Latest MOSFET Silicon technology
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF6785MPBF Fiches technique(HTML) 1 Page - International Rectifier

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www.irf.com
1
04/18/07
IRF6785MTRPbF
Notes  through Š are on page 2
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
DIGITAL AUDIO MOSFET
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low RDS(on) for improved efficiency
• Low Qg for better THD and improved efficiency
• Low Qrr for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 250W per channel into 8Ω Load in
Half-Bridge Configuration Amplifier
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
DirectFET
™ ISOMETRIC
MZ
PD - 97282
SQ
SX
ST
SH
MQ
MX
MT
MN
MZ
VDS
200
V
RDS(on) typ. @ VGS = 10V
85
m
:
Qg typ.
26
nC
RG(int) max
3.0
Key Parameters
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
™
PD @TC = 25°C
Maximum Power Dissipation
W
PD @TA = 25°C
Power Dissipation
e
PD @TA = 70°C
Power Dissipation
e
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
ek
–––
45
°C/W
RθJA
Junction-to-Ambient
hk
12.5
–––
RθJA
Junction-to-Ambient
ik
20
–––
RθJC
Junction-to-Case
jk
–––
1.4
RθJ-PCB
Junction-to-PCB Mounted
1.4
–––
57
Max.
3.4
2.7
27
200
± 20
19
-40 to + 150
0.022
2.8
1.8
33
8.4


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