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74HC3GU04 Fiches technique(PDF) 4 Page - NXP Semiconductors |
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74HC3GU04 Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 17 page 74HC3GU04 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 5 — 2 October 2013 4 of 17 NXP Semiconductors 74HC3GU04 Triple unbuffered inverter 10. Static characteristics [1] All typical values are measured at Tamb = 25 C. 11. Dynamic characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ[1] Max Min Max VIH HIGH-level input voltage VCC = 2.0 V 1.7 1.1 - 1.7 - V VCC = 4.5 V 3.6 2.4 - 3.6 - V VCC = 6.0 V 4.8 3.1 - 4.8 - V VIL LOW-level input voltage VCC = 2.0 V - 0.9 0.3 - 0.3 V VCC = 4.5 V - 2.1 0.9 - 0.9 V VCC = 6.0 V - 2.9 1.2 - 1.2 V VOH HIGH-level output voltage VI = VIH or VIL IO = 20 A; VCC = 2.0 V 1.9 2.0 - 1.9 - V IO = 20 A; VCC = 4.5 V 4.4 4.5 - 4.4 - V IO = 20 A; VCC = 6.0 V 5.9 6.0 - 5.9 - V IO = 4.0 mA; VCC = 4.5 V 4.13 4.32 - 3.7 - V IO = 5.2 mA; VCC = 6.0 V 5.63 5.81 - 5.2 - V VOL LOW-level output voltage VI = VIH or VIL IO = 20 A; VCC = 2.0 V - 0 0.1 - 0.1 V IO = 20 A; VCC = 4.5 V - 0 0.1 - 0.1 V IO = 20 A; VCC = 6.0 V - 0 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.33 - 0.4 V IO = 5.2 mA; VCC = 6.0 V - 0.16 0.33 - 0.4 V II input leakage current VI =VCC or GND; VCC =6.0 V - - 1.0 - 1.0 A ICC supply current per input pin; VI =VCC or GND; IO =0A; VCC =6.0 V -- 10 - 20 A CI input capacitance - 3.0 - - - pF Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6. Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ[1] Max Min Max tpd propagation delay nA to nY; see Figure 5 [2] VCC = 2.0 V - 13 75 - 90 ns VCC = 4.5 V - 6 15 - 18 ns VCC = 6.0 V - 5 13 - 15 ns |
Numéro de pièce similaire - 74HC3GU04_15 |
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Description similaire - 74HC3GU04_15 |
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