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2SA1011 Fiches technique(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

No de pièce 2SA1011
Description  Silicon PNP Power Transistors
Download  4 Pages
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Fabricant  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Site Internet  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

2SA1011 Fiches technique(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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JMnic
Product Specification
2
Silicon PNP Power Transistors
2SA1011
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ,RBE=∞
-160
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-180
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-0.5A; IB=-50mA
-0.5
V
VBE
Base-emitter voltage
IC=-10mA ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-10
μA
hFE
DC current gain
IC=-0.3A ; VCE=-5V
60
200
fT
Transition frequency
IC=-50mA ; VCE=-10V
100
MHz
Cob
Output capacitance
IE=0; f=1MHz ; VCB=-10V
30
pF
Switching times resistive load
ton
Turn-on time
0.29
μs
ts
Storage time
0.48
μs
tf
Fall time
IC=-0.5A ;IB1=-IB2=-50mA
VCC=20V; RL=40Ω
0.19
μs
hFE Classifications
D
E
60-120
100-200


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