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IRLML6402PBF-1 Fiches technique(PDF) 1 Page - International Rectifier |
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IRLML6402PBF-1 Fiches technique(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET S G 1 2 D 3 IRLML6402PbF-1 Micro3 ™(SOT-23) Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W Thermal Resistance Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -3.7 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.2 A IDM Pulsed Drain Current -22 PD @TA = 25°C Power Dissipation 1.3 PD @TA = 70°C Power Dissipation 0.8 Linear Derating Factor 0.01 W/°C EAS Single Pulse Avalanche Energy 11 mJ VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings W Features Benefits Industry-standard pinout SOT-23 Package ⇒ Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial qualification Increased Reliability Form Quantity IRLML6402TRPbF-1 Micro3™ (SOT-23) Tape and Reel 3000 IRLML6402TRPbF-1 Package Type Standard Pack Orderable Part Number Base Part Number VDS -20 V RDS(on) max (@VGS = -4.5V) 0.065 Qg (typical) 8.0 nC ID (@TA = 25°C) -3.7 A Ω 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 28, 2014 |
Numéro de pièce similaire - IRLML6402PBF-1_15 |
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Description similaire - IRLML6402PBF-1_15 |
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