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IRLH5036PBF Fiches technique(PDF) 6 Page - International Rectifier

No de pièce IRLH5036PBF
Description  Secondary Side Synchronous Rectification
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRLH5036PBF Fiches technique(HTML) 6 Page - International Rectifier

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May 20, 2015
IRLH5036PbF
Fig 15.
Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T

1K
VCC
DUT
0
L
S
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test
Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01
Ω
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
RD
VGS
RG
D.U.T.
10V
+
-VDD
VGS


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