IRL6297SDPBF_15 datasheet(7/9 Pages) IRF

No de pièce	IRL6297SDPBF

Description	Charge and Discharge Switch for Battery Application

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Fabricant	IRF [International Rectifier]

Site Internet	http://www.irf.com

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7 / 9 page

September 5, 2013

7

IRL6297SDPbF

Fig 18.

Diode Reverse Recovery Test Circuit for N-Channel

HEXFET® Power MOSFETs

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

* VGS = 5V for Logic Level Devices

*

Inductor Current

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

• di/dt controlled by RG

• Driver same type as D.U.T.

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

+

-

+

-

RG

VDD

D.U.T

DirectFET® Board Footprint, SA Outline

(Small Size Can, A-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

D

G

S

D

G=GATE

D=DRAIN

S=SOURCE

S

G

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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