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BAS21W Fiches technique(PDF) 5 Page - NXP Semiconductors |
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BAS21W Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 11 page BAS21W_SER_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 9 October 2009 5 of 11 NXP Semiconductors BAS21W series High-voltage switching diodes (1) Tamb = 150 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C Based on square wave currents. Tj =25 °C; prior to surge Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values (1) Tamb = 150 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C Fig 3. Reverse current as a function of reverse voltage; typical values VF (V) 0 1.6 1.2 0.4 0.8 006aab212 200 400 600 IF (mA) 0 (1) (3) (4) (2) mbg703 10 1 102 IFSM (A) 10−1 tp (µs) 1104 103 10 102 006aab213 102 IR ( µA) VR (V) 0 250 200 100 150 50 10 1 10−1 10−2 10−3 10−4 10−5 (4) (1) (2) (3) |
Numéro de pièce similaire - BAS21W_15 |
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Description similaire - BAS21W_15 |
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