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IRL40S212 Fiches technique(PDF) 3 Page - International Rectifier |
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IRL40S212 Fiches technique(HTML) 3 Page - International Rectifier |
3 / 12 page IRL40B212/IRL40S212 3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback April 27, 2015 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 256 ––– ––– S VDS = 10V, ID = 100A Qg Total Gate Charge ––– 91 137 nC ID = 100A Qgs Gate-to-Source Charge ––– 25 ––– VDS = 20V Qgd Gate-to-Drain Charge ––– 46 ––– VGS = 4.5V Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 45 ––– td(on) Turn-On Delay Time ––– 39 ––– ns VDD = 20V tr Rise Time ––– 154 ––– ID = 30A td(off) Turn-Off Delay Time ––– 88 ––– RG= 2.7 tf Fall Time ––– 84 ––– VGS = 4.5V Ciss Input Capacitance ––– 8320 ––– pF VGS = 0V Coss Output Capacitance ––– 1050 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 790 ––– ƒ = 1.0MHz, See Fig.7 Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 1250 ––– VGS = 0V, VDS = 0V to 32V Coss eff.(TR) Output Capacitance (Time Related) ––– 1580 ––– VGS = 0V, VDS = 0V to 32V Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 254 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 990* integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 100A,VGS = 0V dv/dt Peak Diode Recovery dv/dt ––– 6.0 ––– V/ns TJ = 175°C,IS = 100A,VDS = 40V trr Reverse Recovery Time ––– 30 ––– ns TJ = 25°C VDD = 34V ––– 32 ––– TJ = 125°C IF = 100A, Qrr Reverse Recovery Charge ––– 26 ––– nC TJ = 25°C di/dt = 100A/µs ––– 28 ––– TJ = 125°C IRRM Reverse Recovery Current ––– 1.4 ––– A TJ = 25°C D S G |
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