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IRFZ48ZPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRFZ48ZPBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 12 page 09/27/10 www.irf.com 1 HEXFET® is a registered trademark of International Rectifier. IRFZ48ZPbF IRFZ48ZSPbF IRFZ48ZLPbF HEXFET® Power MOSFET S D G VDSS = 55V RDS(on) = 11mΩ ID = 61A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistancepersiliconarea. Additionalfeatures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combinetomakethisdesignanextremelyefficient and reliable device for use in a wide variety of applications. D2Pak IRFZ48ZSPbF TO-220AB IRFZ48ZPbF TO-262 IRFZ48ZLPbF Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested) Single Pulse Avalanche Energy Tested Value i IAR Avalanche Current c A EAR Repetitive Avalanche Energy h mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.64 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) j ––– 40 Max. 61 43 240 10 lbf•in (1.1N•m) 91 0.61 ± 20 73 120 See Fig.12a,12b,15,16 300 (1.6mm from case ) -55 to + 175 PD - 95574A |
Numéro de pièce similaire - IRFZ48ZPBF_15 |
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Description similaire - IRFZ48ZPBF_15 |
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