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IRFZ48ZPBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRFZ48ZPBF
Description  ADVANCED PROCESS TECHNOLOGY
Download  12 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFZ48ZPBF Fiches technique(HTML) 1 Page - International Rectifier

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09/27/10
www.irf.com
1
HEXFET® is a registered trademark of International Rectifier.
IRFZ48ZPbF
IRFZ48ZSPbF
IRFZ48ZLPbF
HEXFET® Power MOSFET
S
D
G
VDSS = 55V
RDS(on) = 11mΩ
ID = 61A
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combinetomakethisdesignanextremelyefficient
and reliable device for use in a wide variety of
applications.
D2Pak
IRFZ48ZSPbF
TO-220AB
IRFZ48ZPbF
TO-262
IRFZ48ZLPbF
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9)
IDM
Pulsed Drain Current
c
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
i
IAR
Avalanche Current
c
A
EAR
Repetitive Avalanche Energy
h
mJ
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.64
°C/W
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient
–––
62
RθJA
Junction-to-Ambient (PCB Mount, steady state)
j
–––
40
Max.
61
43
240
10 lbf•in (1.1N•m)
91
0.61
± 20
73
120
See Fig.12a,12b,15,16
300 (1.6mm from case )
-55 to + 175
PD - 95574A


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