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2SC4134T-E Fiches technique(PDF) 2 Page - ON Semiconductor |
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2SC4134T-E Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 9 page 2SC4134 No.2510-2/9 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation PC 0.8 W Tc=25°C10 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=100V, IE=0A 100 nA Emitter Cutoff Current IEBO VEB=4V, IC=0A 100 nA DC Current Gain hFE VCE=5V, IC=100mA 100* 400* Gain-Bandwidth Product fT VCE=10V, IC=100mA 120 MHz Output Capacitance Cob VCB=10V, f=1MHz 8.5 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=400mA, IB=40mA 0.1 0.4 V Base-to-Emitter Saturation Voltage VBE(sat) IC=400mA, IB=40mA 0.85 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 120 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 100 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 6 V Turn-ON Time ton See specified Test Circuit. 80 ns Storage Time tstg 850 ns Fall Time tf 50 ns * : The 2SC4134 is classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SC4134S-E TP 500pcs./bag Pb Free 2SC4134T-E TP 500pcs./bag 2SC4134S-TL-E TP-FA 700pcs./reel 2SC4134T-TL-E TP-FA 700pcs./reel VR RL --5V 50V IC=10IB1= --10IB2=400mA + + 50Ω INPUT OUTPUT RB 100μF 470μF PW=20μs IB1 IB2 DC≤1% Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. |
Numéro de pièce similaire - 2SC4134T-E |
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Description similaire - 2SC4134T-E |
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