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BCX17 Datasheet(Fiches technique) 4 Page - NXP Semiconductors

Numéro de pièce BCX17
Description  PNP general purpose transistors
Télécharger  7 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCX17 Datasheet(HTML) 4 Page - NXP Semiconductors

  BCX17_15 Datenblatt HTML 1Page - NXP Semiconductors BCX17_15 Datenblatt HTML 2Page - NXP Semiconductors BCX17_15 Datenblatt HTML 3Page - NXP Semiconductors BCX17_15 Datasheet HTML 4Page - NXP Semiconductors BCX17_15 Datenblatt HTML 5Page - NXP Semiconductors BCX17_15 Datenblatt HTML 6Page - NXP Semiconductors BCX17_15 Datenblatt HTML 7Page - NXP Semiconductors  
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2004 Jan 16
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BCX17; BCX18
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1.
VBE decreases by approximately −2 mV/°C with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
IE = 0; VCB = −20 V
−100 nA
IE = 0; VCB = −20 V; Tj = 150 °C
−5
μA
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
−100 nA
hFE
DC current gain
IC = −100 mA; VCE = −1 V
100
600
IC = −300 mA; VCE = −1 V
70
IC = −500 mA; VCE = −1 V
40
VCEsat
collector-emitter saturation voltage
IC = −500 mA; IB = −50 mA
−620 mV
VBE
base-emitter voltage
IC = −500 mA; VCE = −1 V; note 1
−1.2
V
Cc
collector capacitance
IE = Ie = 0; VCB = −10 V; f = 1 MHz
9
pF
fT
transition frequency
IC = −10 mA; VCE = −5 V; f = 100 MHz
80
MHz


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