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IRFB812PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRFB812PBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 8 page IRFB812PbF 6/23/11 www.irf.com 1 HEXFET® Power MOSFET TO-220AB Features and Benefits • Fast body diode eliminates the need for external diodes in ZVS applications. • Lower Gate charge results in simpler drive requirements. • Higher Gate voltage threshold offers improved noise immunity . Applications • Zero Voltage Switching SMPS • Uninterruptible Power Supplies • Motor Control applications PD -97693 VDSS RDS(on) typ. Trr typ. ID 500V 1.75 Ω 75ns 3.6A S D G Notes through are on page 2 Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 3.6 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 2.3 A IDM Pulsed Drain Current 14.4 PD @TC = 25°C Power Dissipation 78 W Linear Derating Factor 0.63 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt e 32 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 3.6 MOSFET symbol (Body Diode) A showing the ISM Pulsed Source Current ––– ––– 14.4 integral reverse (Body Diode) Ã p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 3.6A, VGS = 0V f trr Reverse Recovery Time ––– 75 110 ns TJ = 25°C, IF = 3.6A ––– 94 140 TJ = 125°C, di/dt = 100A/μs f Qrr Reverse Recovery Charge ––– 135 200 nC TJ = 25°C, IS = 3.6A, VGS = 0V f ––– 220 330 TJ = 125°C, di/dt = 100A/μs f IRRM Reverse Recovery Current ––– 3.2 4.8 A TJ = 25°C ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 10lb xin (1.1Nxm) |
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