IRFB812PbF

6/23/11

www.irf.com

1

TO-220AB

Features and Benefits

• Fast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Higher Gate voltage threshold offers improved noise

immunity

.

Applications

• Zero Voltage Switching SMPS

• Uninterruptible Power Supplies

• Motor Control applications

PD -97693

500V

1.75

Ω

75ns

3.6A

S

D

G

Notes

Absolute Maximum Ratings

Parameter

Max.

Units

3.6

2.3

A

Pulsed Drain Current

™

14.4

78

W

Linear Derating Factor

0.63

W/°C

Gate-to-Source Voltage

± 20

V

dv/dt

Peak Diode Recovery dv/dt

e

32

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Mounting torque, 6-32 or M3 screw

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

––– –––

3.6

MOSFET symbol

(Body Diode)

A

showing the

Pulsed Source Current

––– ––– 14.4

integral reverse

(Body Diode)

Ù

p-n junction diode.

Diode Forward Voltage

––– –––

1.2

V

Reverse Recovery Time

–––

75

110

–––

94

140

Reverse Recovery Charge

––– 135 200

––– 220 330

Reverse Recovery Current

–––

3.2

4.8

A

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

10lb

xin (1.1Nxm)