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IRF9540NSPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF9540NSPBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 11 page IRF9540NSPbF IRF9540NLPbF HEXFET® Power MOSFET PD - 96030 VDSS = -100V RDS(on) = 117mΩ ID = -23A l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Some Parameters are Different from IRF9540NS/L l P-Channel l Lead-Free 09/30/05 S D G www.irf.com 1 D2Pak IRF9540NSPbF TO-262 IRF9540NLPbF S G S D G D GD S Gate Drain Source Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These fea- tures combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. D D Absolute Maximum Ratings Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ -10V A ID @ TC = 100°C Continuous Drain Current, VGS @ -10V IDM Pulsed Drain Current c PD @TA = 25°C Maximum Power Dissipation W PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy c mJ dv/dt Peak Diode Recovery dv/dt e V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case ––– 1.1 °C/W RθJA Junction-to-Ambient (PCB Mount, steady state) g ––– 40 110 0.9 ± 20 11 84 -14 300 (1.6mm from case ) -55 to + 150 -13 Max. -23 -14 -92 3.1 |
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