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BF621_623 Fiches technique(PDF) 7 Page - NXP Semiconductors

No de pièce BF621_623
Description  PNP high-voltage transistors
Download  10 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BF621_623 Fiches technique(HTML) 7 Page - NXP Semiconductors

Back Button BF621_623_15 Datasheet HTML 2Page - NXP Semiconductors BF621_623_15 Datasheet HTML 3Page - NXP Semiconductors BF621_623_15 Datasheet HTML 4Page - NXP Semiconductors BF621_623_15 Datasheet HTML 5Page - NXP Semiconductors BF621_623_15 Datasheet HTML 6Page - NXP Semiconductors BF621_623_15 Datasheet HTML 7Page - NXP Semiconductors BF621_623_15 Datasheet HTML 8Page - NXP Semiconductors BF621_623_15 Datasheet HTML 9Page - NXP Semiconductors BF621_623_15 Datasheet HTML 10Page - NXP Semiconductors  
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 7 / 10 page
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2004 Dec 14
7
NXP Semiconductors
Product data sheet
PNP high-voltage transistors
BF621; BF623
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0 A; VCB = −200 V
−10
nA
IE = 0 A; VCB = −200 V; Tj = 150 °C
−10
µA
IEBO
emitter-base cut-off current
IC = 0 A; VEB = −5 V
−50
nA
hFE
DC current gain
IC = −25 mA; VCE = −20 V
50
VCEsat
collector-emitter saturation voltage
IC = −30 mA; IB = −5 mA
−800
mV
Cre
feedback capacitance
IC = ic = 0 A; VCE = −30 V; f = 1 MHz
1.6
pF
fT
transition frequency
IC = −10 mA; VCE = −10 V; f = 100 MHz
60
MHz


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