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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF9383MPBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF9383MPBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 10 page  www.irf.com © 2015 International Rectifier Submit Datasheet Feedback June 2, 2015 2 IRF9383MPbF Pulse width ≤ 400μs; duty cycle ≤ 2%. Notes: Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.0159 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.3 2.9 ––– 3.8 4.8 VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -5.9 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 IGSS Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 gfs Forward Transconductance 56 ––– ––– S Qg Total Gate Charge ––– 130 ––– Qg Total Gate Charge ––– 67 ––– Qgs1 Pre- Vth Gate-to-Source Charge ––– 12 ––– VDS = -15V Qgs2 Post -Vth Gate-to-Source Charge ––– 9.4 ––– VGS = -4.5V Qgd Gate-to-Drain Charge ––– 29 ––– ID = -18A Qgodr Gate Charge Overdrive ––– 16.6 ––– See Fig.15 Qsw Switch charge (Qgs2 + Qgd) ––– 38.4 ––– Qoss Output Charge ––– 59 ––– nC RG Gate Resistance ––– 6.5 ––– Ω td(on) Turn-On Delay Time ––– 29 ––– tr Rise Time ––– 160 ––– td(off) Turn-Off Delay Time ––– 115 ––– tf Fall Time ––– 110 ––– Ciss Input Capacitance ––– 7305 ––– Coss Output Capacitance ––– 1780 ––– Crss Reverse Transfer Capacitance ––– 1030 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) g VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 52 78 ns Qrr Reverse Recovery Charge ––– 315 470 nC ns pF A ––– ––– ––– ––– -114 -180 μA m Ω nA nC di/dt = 500A/μs h TJ = 25°C, IS = -18A, VGS = 0V h showing the integral reverse p-n junction diode. VGS = -4.5V, ID = -18A h TJ = 25°C, IF = -18A, ,VDD = -15V VGS = 0V VDS = -15V ID = -18A VDD = -15V, VGS = -4.5VÃh VDS = VGS, ID = -150μA VDS = -24V, VGS = 0V VGS = -20V VGS = 20V Conditions VGS = 0V, ID = -250μA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -22A h VDS = -24V, VGS = 0V VDS = -24V, VGS = 0V, TJ = 125°C MOSFET symbol RG = 1.8Ω VDS = -10V, ID = -18A Conditions See Fig.17 ƒ = 1.0KHz VDS = -15V, VGS = -10V, ID = -18A G D S |
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