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IRF9335PBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF9335PBF Fiches technique(HTML) 2 Page - International Rectifier |
2 / 8 page IRF9335PbF 2 www.irf.com Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 10.6mH, RG = 50Ω, IAS = -4.3A. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. G D S Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage -30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C RDS(on) ––– 48 59 ––– 83 110 VGS(th) Gate Threshold Voltage -1.3 -1.8 -2.4 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -5.1 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– -1.0 ––– ––– -150 IGSS Gate-to-Source Forward Leakage ––– ––– -100 Gate-to-Source Reverse Leakage ––– ––– 100 gfs Forward Transconductance 5.4 ––– ––– S Qg Total Gate Charge h ––– 4.7 ––– nC VDS = -15V,VGS = -4.5V,ID = - 4.3A Qg Total Gate Charge h ––– 9.1 14 Qgs Gate-to-Source Charge h ––– 1.3 ––– Qgd Gate-to-Drain Charge h ––– 2.6 ––– RG Gate Resistance h ––– 10 ––– Ω td(on) Turn-On Delay Time ––– 9.7 ––– tr Rise Time ––– 19 ––– td(off) Turn-Off Delay Time ––– 16 ––– tf Fall Time ––– 15 ––– Ciss Input Capacitance ––– 386 ––– Coss Output Capacitance ––– 94 ––– Crss Reverse Transfer Capacitance ––– 66 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) Ã VSD Diode Forward Voltage ––– ––– -1.2 V trr Reverse Recovery Time ––– 14 21 ns Qrr Reverse Recovery Charge ––– 7.4 11 nC Thermal Resistance Parameter Units RθJL Junction-to-Drain Lead g RθJA Junction-to-Ambient f Typ. ––– ––– °C/W Max. 20 50 Static Drain-to-Source On-Resistance A ––– ––– ––– ––– -2.5 -43 nA nC ns pF ––– Typ. ––– RG = 6.8Ω VDS = -10V, ID = -4.3A VDS = -24V, VGS = 0V, TJ = 125°C VDD = -15V, VGS = -4.5V e ID = -1.0A VDS = -15V VGS = -20V VGS = 20V VGS = -10V m Ω µA TJ = 25°C, IF = -2.5A, VDD = -24V di/dt = 100/µs e TJ = 25°C, IS = -2.5A, VGS = 0V e showing the integral reverse p-n junction diode. MOSFET symbol ID = -4.3A VDS = -24V, VGS = 0V Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1mA VGS = -10V, ID = -5.4A e VGS = -4.5V, ID = -4.3A e VDS = VGS, ID = -10µA Conditions See Figs. 19a & 19b Max. 98 -4.3 ƒ = 1.0KHz VGS = 0V VDS = -25V |
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