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SW-313 Fiches technique(PDF) 1 Page - Tyco Electronics |
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SW-313 Fiches technique(HTML) 1 Page - Tyco Electronics |
1 / 3 page Matched GaAs SPDT Switch, DC - 3 GHz with TTL/CMOS Control Input CR-9 V 3.00 Features n Integral TTL Driver n Low DC Power Consumption n Fast Switching Speed: 7 ns Typical n Surface Mount Package n 50 Ohm Nominal Impedance n MIL-STD-883 Screening Available Description M/A-COM’s SW-313 is a GaAs FET SPDT absorptive switch with integral silicon ASIC driver. Packaged in a 16-lead ceramic surface mount package, this device offers excellent performance and repeatability from DC to 3 GHz while maintaining low power consumption. The SW-313 is ideally suited for use where fast speed, low power consumption and broadband applications are required. MIL-STD-883 screening available. Electrical Specifications 1,2 (From –55°C to +85°C) Parameter Test Conditions Frequency Units Min Typ Max Insertion Loss — DC - 3000 MHz DC - 2000 MHz DC - 1000 MHz DC - 500 MHz dB dB dB dB — — — — — — — — 1.2 1.1 0.9 0.8 VSWR — DC - 3000 MHz DC - 2000 MHz DC - 1000 MHz DC - 500 MHz Ratio Ratio Ratio Ratio — — — — — — — — 1.4:1 1.35:1 1.35:1 1.3:1 Isolation — DC - 3000 MHz DC - 2000 MHz DC - 1000 MHz DC - 500 MHz dB dB dB dB 35 45 50 55 — — — — — — — — Trise, Tfall 10% to 90% — ns — 7 — Ton, Toff 1.3V CTL to 90% / 10% — ns — 18 — Transients In-Band — mV — 25 — 1 dB Compression Input Power 0.05 GHz 0.5 GHz to 3 GHz dBm dBm — — +25 +30 — — IP2 Two-Tone Input Power up to +5 dBm 0.05 GHz 0.5 GHz to 3 GHz dBm dBm — — +60 +65 — — IP3 Two-Tone Input Power up to +5 dBm 0.05 GHz 0.5 GHz to 3 GHz dBm dBm — — +40 +46 — — Vin Low 0V to 0.8V — µA — — 1 Vin High 2.0V to 5.0V — µA — — 1 1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee. 2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port. |
Numéro de pièce similaire - SW-313 |
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Description similaire - SW-313 |
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