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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF8304MPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF8304MPBF Fiches technique(HTML) 1 Page - International Rectifier |
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1 / 9 page  DirectFET® Power MOSFET Description The IRF8304MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8304MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF8304MPbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses. Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 22A. Notes: DirectFET® ISOMETRIC MX l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for both Sync.FET and some Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested SQ SX ST MQ MX MT MP 0 5 10 15 20 VGS, Gate -to -Source Voltage (V) 0 1 2 3 4 5 6 ID = 28A TJ = 25°C TJ = 125°C VDSS VGS RDS(on) RDS(on) 30V max ±20V max 1.7m Ω@ 10V 2.4mΩ@ 4.5V Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAR Avalanche Current Ãg A Max. 22 170 220 ±20 30 28 190 22 0 102030 40506070 80 QG Total Gate Charge (nC) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 VDS= 24V VDS= 15V VDS= 6.0V ID= 22A Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 28nC 7.9nC 4.2nC 39nC 21nC 1.8V IRF8304MPbF 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 17, 2014 Orderable Part Number Form Quantity IRF8304MPbF DirectFET MX Tape and Reel 4800 IRF8304MTRPbF Base Part number Package Type Standard Pack |
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