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IRF7805ZPBF-1 Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7805ZPBF-1 Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF7805ZPbF-1 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 20, 2013 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 5.5 6.8 m Ω ––– 7.0 8.7 VGS(th) Gate Threshold Voltage 1.35 ––– 2.25 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– - 4.7 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 64 ––– ––– S Qg Total Gate Charge ––– 18 27 Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.7 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.6 ––– nC Qgd Gate-to-Drain Charge ––– 6.2 ––– Qgodr Gate Charge Overdrive ––– 5.5 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 7.8 ––– Qoss Output Charge ––– 10 ––– nC RG Gate Resistance ––– 1.0 2.1 Ω td(on) Turn-On Delay Time ––– 11 ––– tr Rise Time ––– 10 ––– td(off) Turn-Off Delay Time ––– 14 ––– ns tf Fall Time ––– 3.7 ––– Ciss Input Capacitance ––– 2080 ––– Coss Output Capacitance ––– 480 ––– pF Crss Reverse Transfer Capacitance ––– 220 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 3.1 (Body Diode) A ISM Pulsed Source Current ––– ––– 120 (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 29 44 ns Qrr Reverse Recovery Charge ––– 20 30 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Conditions Max. 72 12 ƒ = 1.0MHz Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 16A e MOSFET symbol VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V e ID = 12A VDS = 15V VGS = 20V VGS = -20V VDS = 24V, VGS = 0V TJ = 25°C, IF = 12A, VDD = 15V di/dt = 100A/μs e TJ = 25°C, IS = 12A, VGS = 0V e showing the integral reverse p-n junction diode. VGS = 4.5V, ID = 13A e VGS = 4.5V Typ. ––– VDS = VGS, ID = 250μA Clamped Inductive Load VDS = 15V, ID = 12A VDS = 24V, VGS = 0V, TJ = 125°C ––– ID = 12A VGS = 0V VDS = 15V |
Numéro de pièce similaire - IRF7805ZPBF-1_15 |
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Description similaire - IRF7805ZPBF-1_15 |
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