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2SA1593S-TL-E Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce 2SA1593S-TL-E
Description  Bipolar Transistor Adoption of FBET, MBIT processes
Download  9 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2SA1593S-TL-E Fiches technique(HTML) 2 Page - ON Semiconductor

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2SA1593 / 2SC4135
No.2511-2/9
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Collector Dissipation
PC
1W
Tc=25°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=(--)100V, IE=0A
(--)100
nA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)100
nA
DC Current Gain
hFE
VCE=(--)5V, IC=(--)100mA
100*
400*
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)100mA
120
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(25)16
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)1A, IB=(--)100mA
(--0.22)0.13
(--0.6)0.4
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)1A, IB=(--)100mA
(--)0.85
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)100
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-ON Time
ton
See specified Test Circuit.
(80)80
ns
Storage Time
tstg
(750)1000
ns
Fall Time
tf
(40)50
ns
* : The 2SA1593/2SC4135 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SA1593S-E
TP
500pcs./bag
Pb Free
2SA1593T-E
TP
500pcs./bag
2SC4135S-E
TP
500pcs./bag
2SC4135T-E
TP
500pcs./bag
2SA1593S-TL-E
TP-FA
700pcs./reel
2SA1593T-TL-E
TP-FA
700pcs./reel
2SC4135S-TL-E
TP-FA
700pcs./reel
2SC4135T-TL-E
TP-FA
700pcs./reel
VR
RL
--5V
50V
IC=10IB1= --10IB2=0.7A
(For PNP, the polarity is reversed)
+
+
50
Ω
INPUT
OUTPUT
RB
100
μF
470
μF
PW=20
μs
IB1
IB2
DC
≤1%
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.


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