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IRF7416PBF-1 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF7416PBF-1
Description  Industry-standard pinout SO-8 Package
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7416PBF-1 Fiches technique(HTML) 2 Page - International Rectifier

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IRF7416PbF-1
2
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November 19, 2013
S
D
G
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
‚ Starting TJ = 25°C, L = 25mH
RG = 25Ω, IAS = -5.6A. (See Figure 12)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Surface mounted on FR-4 board, t ≤ 10sec.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C
–––
––– 0.020
–––
––– 0.035
VGS(th)
Gate Threshold Voltage
-1.0
––– -2.04
V
gfs
Forward Transconductance
5.6
–––
–––
S
IDSS
Drain-to-Source Leakage Current
–––
–––
-1.0
–––
–––
-25
IGSS
Gate-to-Source Forward Leakage
–––
–––
-100
Gate-to-Source Reverse Leakage
–––
–––
100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
61
92
Qgs
Gate-to-Source Charge
–––
8.0
12
Qgd
Gate-to-Drain ("Miller") Charge
–––
22
32
td(on)
Turn-On Delay Time
–––
18
–––
tr
Rise Time
–––
49
–––
td(off)
Turn-Off Delay Time
–––
59
–––
tf
Fall Time
–––
60
–––
Ciss
Input Capacitance
–––
1700
–––
Coss
Output Capacitance
–––
890
–––
Crss
Reverse Transfer Capacitance
–––
410
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
-1.0
V
trr
Reverse Recovery Time
–––
56
85
ns
TJ = 25°C,IF = -5.6A
Qrr
Reverse Recovery Charge
–––
99
150
nC di/dt = 100A/μs e
VDS = VGS, ID = -250μA
Conditions
VDS = -10V, ID = -2.8A
ID = -5.6A
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS = -4.5V, ID = -2.8A f
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -5.6A f
TJ = 25°C, IS = -5.6A, VGS = 0V e
integral reverse
p-n junction diode.
Conditions
MOSFET symbol
showing the
A
pF
ns
nC
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
nA
μA
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -10V, See Fig. 6 & 9 fÃ
VGS = 20V
VDS = -24V
VDD = -15V
ID = -5.6A
RG = 6.2Ω
RD = 2.7Ω, See Fig. 10 f
VGS = 0V
-45
–––
–––
–––
–––
-3.1


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