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KDR367E Fiches technique(PDF) 1 Page - KEC(Korea Electronics) |
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KDR367E Fiches technique(HTML) 1 Page - KEC(Korea Electronics) |
1 / 2 page 2014. 3. 31 1/2 SEMICONDUCTOR TECHNICAL DATA KDR367E SCHOTTKY BARRIER TYPE DIODE Revision No : 2 LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES ・Low Forward Voltage : V F(2)=0.23V (Typ.) ・Small Package : ESC. MAXIMUM RATING (Ta=25 ℃) 1. ANODE 2. CATHODE ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 D C 1 2 E F 0.13 0.05 F G + _ + _ + _ + _ + _ + _ 0.20 0.10 + _ ELECTRICAL CHARACTERISTICS (Ta=25 ℃) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Maximum (Peak) Forward Current IFM 200 mA Average Forward Current IO 100 mA Surge Current (10ms) IFSM 1 A Power Dissipation PD 150* mW Junction Temperature Tj 125 ℃ Storage Temperature Range Tstg -55 ~125 ℃ CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF(1) IF=1mA - 0.18 - V VF(2) IF=5mA - 0.23 0.30 VF(3) IF=100mA - 0.35 0.50 Reverse Current IR VR=10V - - 20 μA Total Capacitance CT VR=0V, f=1MHz - 20 40 pF * : Mounted on a glass epoxy circuit board of 20 ×20mm, pad dimension of 4 ×4mm. Type Name Marking S U |
Numéro de pièce similaire - KDR367E_15 |
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Description similaire - KDR367E_15 |
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