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BAV70C Fiches technique(PDF) 1 Page - KEC(Korea Electronics) |
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BAV70C Fiches technique(HTML) 1 Page - KEC(Korea Electronics) |
1 / 2 page 2015. 5. 12 1/2 SEMICONDUCTOR TECHNICAL DATA BAV70C SILICON EPITAXIAL PLANAR DIODE Revision No : 0 ULTRA HIGH SPEED SWITCHING APPLICATION FEATURES ・Small Package : SOT-23(1). MAXIMUM RATING (Ta=25 ℃) 1. ANODE 1 2. ANODE 2 3. CATHODE 2 1 3 DIM MILLIMETERS SOT-23(1) A B C D E 2.90 0.1 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 G1.90 J K L M N 0.10 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 M E 1 2 3 B 1.30 MAX LL + _ ELECTRICAL CHARACTERISTICS (Ta=25 ℃) Type Name Marking Lot No. H7C CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Reverse Voltage VR IR=100uA 80 - - V Forward Voltage VF(1) IF=1mA - 0.59 0.65 V VF(2) IF=10mA - 0.72 0.8 VF(3) IF=100mA - - 1.0 Reverse Current IR VR=80V - - 1 μA Total Capacitance CT VR=0, f=1MHz - 2 3 pF * Note1 : Package Mounted On FR-5 Board (25.4 ×19.05×1.57mm) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage VR 80 V Continuous Forward Current IF 100 mA Surge Current (10ms) IFSM 1A Power Dissipation PD 225* mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ |
Numéro de pièce similaire - BAV70C_15 |
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Description similaire - BAV70C_15 |
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