IRF7324PBF_15 datasheet(1/8 Pages) IRF

No de pièce	IRF7324PBF

Description	Ultra Low On-Resistance

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Fabricant	IRF [International Rectifier]

Site Internet	http://www.irf.com

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HEXFET® Power MOSFET

6/29/04

IRF7324PbF

Absolute Maximum Ratings

www.irf.com

1

Thermal Resistance

Parameter

Max.

Units

RθJA

Maximum Junction-to-Ambient

62.5

°C/W

Parameter

Max.

Units

VDS

Drain-Source Voltage

-20

V

ID @ TA = 25°C

Continuous Drain Current, VGS @ -4.5V

-9.0

ID @ TA = 70°C

Continuous Drain Current, VGS @ -4.5V

-7.1

A

IDM

Pulsed Drain Current

-71

PD @TA = 25°C

Maximum Power Dissipation

2.0

W

PD @TA = 70°C

Maximum Power Dissipation

1.3

W

Linear Derating Factor

16

mW/°C

VGS

Gate-to-Source Voltage

± 12

V

TJ , TSTG

Junction and Storage Temperature Range

-55 to + 150

°C

VDSS = -20V

RDS(on) = 0.018Ω

New trench HEXFET® PowerMOSFETs fromInternational

Rectifier utilize advanced processing techniques to

achieve extremely low on-resistance per silicon area.

This benefit, combined with the ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliable device for use in battery and load management

applications.

●

Trench Technology

●

Ultra Low On-Resistance

●

Dual P-Channel MOSFET

●

Low Profile (<1.1mm)

●

Available in Tape & Reel

●

2.5V Rated

●

Lead-Free

Description

PD - 95460

D1

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

SO-8

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