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IRF7241PBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF7241PBF
Description  Trench Technology
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7241PBF Fiches technique(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VDS
Drain- Source Voltage
-40
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -10V
-6.2
ID @ TA= 70°C
Continuous Drain Current, VGS @ -10V
-4.9
A
IDM
Pulsed Drain Current

-25
PD @TA = 25°C
Power Dissipation
ƒ
2.5
PD @TA = 70°C
Power Dissipation
ƒ
1.6
Linear Derating Factor
20
mW/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
10/6/04
www.irf.com
1
IRF7241PbF
HEXFET® Power MOSFET
PD - 95294
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
VDSS
RDS(on) max (mW)
ID
-40V
41@VGS = -10V
-6.2A
70@VGS = -4.5V
-5.0A
SO-8
Symbol
Parameter
Typ.
Max.
Units
RθJL
Junction-to-Drain Lead
–––
20
RθJA
Junction-to-Ambient
ƒ
–––
50
°C/W
Thermal Resistance
New trench HEXFET® Power MOSFETs
from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in battery and load management applications.
Description
Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Available in Tape & Reel
Lead-Free


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