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IRF7103PBF-1 Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7103PBF-1 Fiches technique(HTML) 2 Page - International Rectifier |
2 / 9 page 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 30, 2014 IRF7103PbF-1 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 50 V VGS = 0V, ID = 250µA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient 0.049 V/°C Reference to 25°C, ID = 1mA 0.11 0.13 VGS = 10V, ID = 3.0A 0.16 0.20 VGS = 4.5V, ID = 1.5A VGS(th) Gate Threshold Voltage 1.0 3.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 3.8 S VDS = 15V, ID = 3.0A 2.0 VDS = 40V, VGS = 0V 25 VDS = 40V, VGS = 0V, TJ = 55 °C Gate-to-Source Forward Leakage 100 VGS = 20V Gate-to-Source Reverse Leakage -100 VGS = - 20V Qg Total Gate Charge 12 30 ID = 2.0A Qgs Gate-to-Source Charge 1.2 nC VDS = 25V Qgd Gate-to-Drain ("Miller") Charge 3.5 VGS = 10V td(on) Turn-On Delay Time 9.0 20 VDD = 25V tr Rise Time 8.0 20 ID = 1.0A td(off) Turn-Off Delay Time 45 70 RG = 6.0Ω tf Fall Time 25 50 RD = 25Ω Between lead,6mm(0.25in.) from package and center of die contact Ciss Input Capacitance 290 VGS = 0V Coss Output Capacitance 140 pF VDS = 25V Crss Reverse Transfer Capacitance 37 = 1.0MHz Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.2 V TJ = 25°C, IS = 1.5A, VGS = 0V trr Reverse Recovery Time 70 100 ns TJ = 25°C, IF = 1.5A Qrr Reverse RecoveryCharge 110 170 nC di/dt = 100A/µs ton Forward Turn-On Time Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 12 2.0 A S D G IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 6.0 LD Internal Drain Inductance 4.0 nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. ISD ≤ 1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec. |
Numéro de pièce similaire - IRF7103PBF-1 |
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Description similaire - IRF7103PBF-1 |
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