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IRF6728MTRPBF Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF6728MTRPBF
Description  RoHS Compliant Containing No Lead and Halogen Free
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF6728MTRPBF Fiches technique(HTML) 2 Page - International Rectifier

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IRF6728MTRPbF
2
www.irf.com
‡ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Notes:
D
S
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
2.7
––– mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.8
2.5
–––
2.8
3.6
VGS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
-4.8
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
500
μA
–––
–––
5.0
mA
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
61
–––
–––
S
Qg
Total Gate Charge
–––
28
42
Qgs1
Pre-Vth Gate-to-Source Charge
–––
6.5
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
3.1
–––
nC
Qgd
Gate-to-Drain Charge
–––
8.7
–––
Qgodr
Gate Charge Overdrive
–––
9.7
–––
See Fig. 15
Qsw
Switch Charge (Qgs2 + Qgd)
–––
11.8
–––
Qoss
Output Charge
–––
22
–––
nC
RG
Gate Resistance
–––
1.3
–––
Ω
td(on)
Turn-On Delay Time
–––
16
–––
tr
Rise Time
–––
34
–––
ns
td(off)
Turn-Off Delay Time
–––
19
–––
tf
Fall Time
–––
19
–––
Ciss
Input Capacitance
–––
4110
–––
Coss
Output Capacitance
–––
970
–––
pF
Crss
Reverse Transfer Capacitance
–––
340
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
23
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
180
(Body Diode)Ãg
VSD
Diode Forward Voltage
–––
0.7
0.75
V
trr
Reverse Recovery Time
–––
21
32
ns
Qrr
Reverse Recovery Charge
–––
29
44
nC
di/dt = 300A/μs i
TJ = 25°C, IS = 18A, VGS = 0V i
showing the
integral reverse
p-n junction diode.
VGS = 4.5V, ID = 18A i
VDS = VGS, ID = 10mA
VDS = VGS, ID = 100μA
TJ = 25°C, IF = 18A
VGS = 4.5V
ID = 18A
VGS = 0V
VDS = 15V
ID = 18A
VDD = 15V, VGS = 4.5VÃi
Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 6mA
VGS = 10V, ID = 23A i
VGS = 20V
VGS = -20V
VDS = 24V, VGS = 0V
VDS = 15V
VDS = 24V, VGS = 0V, TJ = 125°C
MOSFET symbol
RG = 1.8Ω
VDS = 15V, ID = 18A
Conditions
See Fig. 17
ƒ = 1.0MHz
VDS = 16V, VGS = 0V


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