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CS5124 Fiches technique(PDF) 4 Page - ON Semiconductor

No de pièce CS5124
Description  PWM Controllers
Download  11 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CS5124 Fiches technique(HTML) 4 Page - ON Semiconductor

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CS5124
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ELECTRICAL CHARACTERISTICS (continued) (−40°C ≤ TJ ≤ 125°C; −40°C ≤ TA ≤ 105°C, 7.60 V ≤ VCC ≤ 20 V, UVLO = 3.0 V,
ISENSE = 0 V, CV(CC) = 0.33 mF, CGATE = 1.0 nF (ESR = 10 W); CSS = 470 pF; CV(FB) = 100 pF, unless otherwise specified.)
Characteristic
Unit
Max
Typ
Min
Test Conditions
Soft−Start
Soft−Start Charge Current
7.0
10
13
mA
Soft−Start Discharge Current
0.5
10.0
mA
VSS Voltage when VFB Begins to
Rise
VFB = 300 mV
1.40
1.62
1.80
V
Peak Soft−Start Charge Voltage
4.7
4.9
V
Valley Soft−Start Discharge Voltage
200
275
400
mV
Current Sense
First Current Sense Threshold
At max duty cycle
170
195
215
mV
Second Current Sense Threshold
250
275
315
mV
ISENSE to GATE Prop. Delay
0 to 700 mV pulse into ISENSE (after blanking time)
60
90
130
ns
Leading Edge Blanking Time
0 to 400 mV pulse into ISENSE
90
130
180
ns
Internal Offset
Note 3
60
mV
Voltage Feedback
VFB Pull−up Res.
2.9
4.3
8.1
kW
VFB Clamp Voltage
2.63
2.90
3.15
V
VFB Fault Voltage Threshold
460
490
520
mV
Output Gate Drive
Maximum Sleep Pull−down Voltage
VCC = 6.0 V, IOUT = 1.0 mA
1.2
2.0
V
GATE High (AC)
Series resistance < 1.0 W, (Note 3)
VCC − 1.0 VCC − 0.5
V
GATE Low (AC)
Series resistance < 1.0 W, (Note 3)
0.0
0.5
V
GATE High Clamp Voltage
VCC = 20 V
11.0
13.5
16.0
V
Rise Time
Measure GATE rise time,
1.0 V < GATE < 9.0 V VCC = 12 V
45
65
ns
Fall TIme
Measure GATE fall time,
9.0 V > GATE > 1.0 V VCC = 12 V
25
55
ns
Thermal Shutdown
Thermal Shutdown Temperature
(Note 3) GATE low
135
150
165
°C
Thermal Enable Temperature
(Note 3) GATE switching
100
125
150
°C
Thermal Hysteresis
(Note 3)
15
25
35
°C
3. Not tested in production. Specification is guaranteed by design.


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