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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF6613PBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF6613PBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF6613PbF 2 www.irf.com S D G Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.2mH, RG = 25Ω, IAS = 18A.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Notes: Surface mounted on 1 in. square Cu board. Used double sided cooling, mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to top (Drain) of part. Rθ is measured at TJ of approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 38 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.6 3.4 m Ω ––– 3.1 4.1 VGS(th) Gate Threshold Voltage 1.35 ––– 2.25 V ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 93 ––– ––– S Qg Total Gate Charge ––– 42 63 Qgs1 Pre-Vth Gate-to-Source Charge ––– 11.5 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 3.3 ––– nC Qgd Gate-to-Drain Charge ––– 12.6 ––– Qgodr Gate Charge Overdrive ––– 14.6 ––– See Fig. 6 and 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 15.9 ––– Qoss Output Charge ––– 22 ––– nC td(on) Turn-On Delay Time ––– 18 ––– tr Rise Time ––– 47 ––– td(off) Turn-Off Delay Time ––– 27 ––– ns tf Fall Time ––– 4.9 ––– Ciss Input Capacitance ––– 5950 ––– Coss Output Capacitance ––– 990 ––– pF Crss Reverse Transfer Capacitance ––– 460 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 110 (Body Diode) A ISM Pulsed Source Current ––– ––– 180 (Body Diode) e VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 38 57 ns Qrr Reverse Recovery Charge ––– 42 63 nC ID = 18A VGS = 0V VDS = 15V ID = 18A TJ = 25°C, IF = 18A di/dt = 100A/µs g TJ = 25°C, IS = 18A, VGS = 0V g showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 23A g VGS = 4.5V, ID = 18A g VDS = VGS, ID = 250µA VDS = 32V, VGS = 0V VDS = 32V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 4.5V MOSFET symbol Clamped Inductive Load VDS = 15V, ID = 18A Conditions ƒ = 1.0MHz VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V g VDS = 20V |
Numéro de pièce similaire - IRF6613PBF_15 |
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Description similaire - IRF6613PBF_15 |
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