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KTB1241 Datasheet(Fiches technique) 1 Page - KEC(Korea Electronics)

Numéro de pièce KTB1241
Description  EPITAXIAL PLANAR PNP TRANSISTOR
Télécharger  2 Pages
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTB1241 Datasheet(HTML) 1 Page - KEC(Korea Electronics)

  KTB1241_15 Datasheet HTML 1Page - KEC(Korea Electronics) KTB1241_15 Datenblatt HTML 2Page - KEC(Korea Electronics)  
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1998. 8. 21
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTB1241
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
FEATURE
High Breakdown Voltage and High Current
: VCEO=-80V, IC=-1A.
Low VCE(sat)
Complementary to KTD1863.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
G
H
K
L
1. EMITTER
2. COLLECTOR
3. BASE
P
TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
F
J
M
O
Q
25
1.25
Φ1.50
0.10 MAX
DEPTH:0.2
123
B
C
Q
K
FF
M
M
N
N
H
L
D
C
N
P
HH
E
H
S
12.50 0.50
R
1.00
S
1.15 MAX
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE Classification O:70 140, Y:120 240, GR:200 400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-80
V
Emitter Base Voltage
VEBO
-5
V
Collector Current
IC
-1
A
Emitter Current
IE
1
A
Collector Power Dissipation
PC
1
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-60V, IE=0
-
-
-1
A
Emitter-Cut-off Current
IEBO
VEB=-4V, IC=0
-
-
-1
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-1mA, IB=0
-80
-
-
V
DC Current Gain
hFE (Note)
VCE=-3V, IC=-100mA
70
-
400
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-500mA, IB=-50mA
-
-
-0.4
V
Transition Frequency
fT
VCE=-5V, IC=-50mA, f=30MHz
-
100
-
MHz
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
25
-
pF


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