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KTB1151 Datasheet(Fiches technique) 1 Page - KEC(Korea Electronics)

Numéro de pièce KTB1151
Description  EPITAXIAL PLANAR PNP TRANSISTOR
Télécharger  3 Pages
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTB1151 Datasheet(HTML) 1 Page - KEC(Korea Electronics)

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2003. 7. 24
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SEMICONDUCTOR
TECHNICAL DATA
KTB1151
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : PC=1.5W(Ta=25 )
Complementary to KTD1691.
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
Φ3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
23
+_
+_
+_
15.50 0.5
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-7
V
Collector Current
DC
IC
-5
A
Pulse *
ICP
-8
Base Current
IB
-1
A
Collector Power
Dissipation
Ta=25
PC
1.5
W
Tc=25
20
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-50V, IE=0
-
-
-10
A
Emitter Cut-off Current
IEBO
VEB=-7V, IC=0
-
-
-10
A
DC Current Gain
*
hFE 1
VCE=-1V, IC=-0.1A
60
-
-
hFE2 (Note)
VCE=-1V, IC=-2A
160
-
400
hFE 3
VCE=-2V, IC=-5A
50
-
-
Collector-Emitter Saturation Voltage *
VCE(sat)
IC=-2A, IB=-0.2A
-
-0.14
-0.3
V
Base-Emitter Saturation Voltage
*
VBE(sat)
IC=-2A, IB=-0.2A
-
-0.9
-1.2
V
Switching
Time
Turn On Time
ton
IB1
B1
I
CC
V
=-10V
IB2
IB2
20µsec
-I =I =0.2A
1%
B1
B2
OUTPUT
DUTY CYCLE
INPUT
0
<
=
-
0.15
1
S
Storage Time
tstg
-
0.78
2.5
Fall Time
tf
-
0.18
1
* Pulse test : PW 350 S, Duty Cycle 2% Pulse
Note) hFE(2) Classification : O:160 320, Y:200 400.
* PW 10ms, Duty Cycle 50%


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