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IRF2903ZPBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF2903ZPBF
Description  Advanced Process Technology
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF2903ZPBF Fiches technique(HTML) 1 Page - International Rectifier

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07/22/10
www.irf.com
1
HEXFET® Power MOSFET
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiveavalancherating.Thesefeaturescombine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Description
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free
Features
IRF2903ZPbF
VDSS = 30V
RDS(on) = 2.4mΩ
ID = 75A
S
D
G
GD
S
Gate
Drain
Source
TO-220AB
IRF2903ZPbF
D
S
D
G
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS (Thermally limited) Single Pulse Avalanche Energyd
mJ
EAS (Tested )
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
Ù
A
EAR
Repetitive Avalanche Energy
g
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
i
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
0.51
RθCS
Case-to-Sink, Flat, Greased Surface
i
0.50
–––
°C/W
RθJA
Junction-to-Ambient
ij
–––
62
-55 to + 175
300 (1.6mm from case )
10 lbf
yin (1.1Nym)
290
2.0
± 20
Max.
260
180
1020
75
820
290
See Fig.12a, 12b, 15, 16
PD -96097A


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