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IRF100S201 Datasheet(Fiches technique) 2 Page - International Rectifier

Numéro de pièce IRF100S201
Description  Brushed Motor drive applications
Télécharger  12 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF100S201 Datasheet(HTML) 2 Page - International Rectifier

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IRF100B201/IRF100S201
2
www.irf.com
© 2015 International Rectifier
Submit Datasheet Feedback
March 26, 2015
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
–––
V
VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.1
–––
V/°C
Reference to 25°C, ID = 5mA 
RDS(on)
Static Drain-to-Source On-Resistance
–––
3.5
4.2
m
 VGS = 10V, ID = 115A 
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current
–––
–––
20
µA
VDS =100 V, VGS = 0V
–––
–––
250
VDS = 80V,VGS = 0V,TJ =125°C
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-100
VGS = -20V
RG
Gate Resistance
–––
2.2
–––

Notes:

Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 86µH, RG = 50, IAS = 115A, VGS =10V.

ISD  115A, di/dt  1400A/µs, VDD  V(BR)DSS, TJ 175°C.

Pulse width
 400µs; duty cycle  2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
Ris measured at TJ approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 45A, VGS =10V.
This value determined from sample failure population, starting TJ =25°C, L= 86µH, RG = 50, IAS =115A, VGS =10V.
Avalanche Characteristics 
EAS (Thermally limited)
Single Pulse Avalanche Energy 
567
EAS (Thermally limited)
Single Pulse Avalanche Energy 
1005
IAR
Avalanche Current 
See Fig 15, 15, 23a, 23b 
A
EAR
Repetitive Avalanche Energy 
mJ
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value 
240
Thermal Resistance  
Symbol
Parameter
Typ.
Max.
Units
RJC
Junction-to-Case 
–––
0.34
RCS
Case-to-Sink, Flat Greased Surface
0.50
–––
RJA
Junction-to-Ambient 
–––
62
°C/W  
RJA
Junction-to-Ambient (PCB Mount) 
–––
40
Absolute Maximum Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
192
A  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
136
IDM
Pulsed Drain Current 
690
PD @TC = 25°C
Maximum Power Dissipation
441
W
Linear Derating Factor
2.9
W/°C
VGS
Gate-to-Source Voltage
± 20
V
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
 


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