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BAS40V-TG-WS Fiches technique(PDF) 1 Page - WILLAS ELECTRONIC CORP |
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BAS40V-TG-WS Fiches technique(HTML) 1 Page - WILLAS ELECTRONIC CORP |
1 / 3 page SOT-563 Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Drop Fast Switching Marking: KAN Maximum Ratings @Ta=25 ℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage DC Blocking Voltage VRM VR 40 V Average Rectified Output Current IO 200 mA Power Dissipation Pd 150 mW Thermal Resistance Junction to Ambient RθJA 667 ℃/W temperature TJ 1 25 Storage temperature range TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V(BR) IR= 10μA 40 V Reverse voltage leakage current IR VR=30V 200 nA Forward voltage VF IF=1mA IF=40mA 380 1000 mV Total capacitance CT VR=0,f=1MHz 5 pF Reverse recovery time t r r IF=10mA, IR=IF=1mA RL=100Ω 5 n s SOT-563 6 1 5 2 4 3 ℃ 2012-11 WILLAS ELECTRONIC CORP. BAS40V Pb-Free package is available RoHS product for packing code suffix ”G” Halogen free product for packing code suffix “H” Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 • • • • • • • • Package outline Mechanical data Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H • Terminals :Plated terminals, solderable per MIL-STD-750 , Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram • 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Dimensions in inches and (millimeters) SOD-123H Pb Free Product 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE WILLAS BARRIER RECTIFIERS -20V- 200V FM120-M THRU FM1200-M MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% WILLAS ELECTRONIC CORP. 201 2-06 RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Marking Code 12 13 14 15 16 18 10 115 120 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 14 21 28 35 42 56 70 105 140 20 30 40 50 60 80 100 150 200 Volts Volts Volts Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO IFSM 1.0 30 Amps Amps Typical Thermal Resistance (Note 2) RΘJA Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range TSTG -55 to +125 40 120 - 65 to +175 -55 to +150 ℃/W PF ℃ ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Maximum Forward Voltage at 1.0A DC VF 0.50 0.70 0.85 0.9 0.92 Volts @TA=25℃ 0.5 Maximum Average Reverse Current at Rated DC Blocking Voltage @TA=125℃ IR 10 mAmps NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" • • Moisture Sensitivity Level 1 |
Numéro de pièce similaire - BAS40V-TG-WS |
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Description similaire - BAS40V-TG-WS |
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