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STU314D Fiches technique(PDF) 3 Page - SamHop Microelectronics Corp. |
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STU314D Fiches technique(HTML) 3 Page - SamHop Microelectronics Corp. |
3 / 11 page Symbol Min Typ Max Units BVDSS -30 V -1 IGSS ±10 uA VGS(th) -1 V 26 gFS 17 S VSD CISS 815 pF COSS 215 pF CRSS 125 pF Qg 13 nC 15 nC Qgs 62 nC Qgd 13 tD(ON) 15.5 ns tr 1.7 ns tD(OFF) 4.7 ns tf ns Gate-Drain Charge VDS=-15V,VGS=0V SWITCHING CHARACTERISTICS Gate-Source Charge VDD=-15V ID=-1A VGS=-10V RGEN=6 ohm Total Gate Charge Rise Time Turn-Off Delay Time VDS=-15V,ID=-14A,VGS=-10V Fall Time Turn-On Delay Time m ohm VGS=-10V , ID=-14A VDS=-5V , ID=-14A Input Capacitance Output Capacitance DYNAMIC CHARACTERISTICS RDS(ON) Drain-Source On-State Resistance Forward Transconductance Diode Forward Voltage IDSS uA Gate Threshold Voltage VDS=VGS , ID=-250uA VDS=-24V , VGS=0V VGS= ±20V , VDS=0V Zero Gate Voltage Drain Current Gate-Body Leakage Current P-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) OFF CHARACTERISTICS Parameter Conditions Drain-Source Breakdown Voltage VGS=0V , ID=-250uA Reverse Transfer Capacitance ON CHARACTERISTICS -3 VGS=-4.5V , ID=-11A 34 41 55 m ohm c f=1.0MHz c VDS=-15V,ID=-14A, VGS=-10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=-1.7A -0.77 -1.3 V Notes a.Surface Mounted on FR4 Board,t < 10sec. b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13) _ _ STU314D www.samhop.com.tw Feb,04,2009 3 nC VDS=-15V,ID=-14A,VGS=-4.5V 7.3 _ -1.8 b IS Maximum Continuous Drain-Source Diode Forward Current A -1.7 Ver 1.0 |
Numéro de pièce similaire - STU314D |
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Description similaire - STU314D |
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