STC3116E datasheet(4/7 Pages) SAMHOP

No de pièce	STC3116E

Description	Super high dense cell design for low RDS(ON).

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Fabricant	SAMHOP [SamHop Microelectronics Corp.]

Site Internet	http://www.samhop.com.tw

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www.samhop.com.tw

Jun,14,2012

4

VGS, Gate-to-Source Voltage(V)

Figure 7. On-Resistance vs.

VSD, Body Diode Forward Voltage(V)

Figure 8. Body Diode Forward Voltage

VDS, Drain-to-Source Voltage(V)

Figure 9. Capacitance

Qg, Total Gate Charge(nC)

Figure 10. Gate Charge

Rg, Gate Resistance(

Ω)

Figure 11. switching characteristics

VDS, Drain-Source Voltage(V)

Figure 12. Maximum Safe Operating Area

Gate-Source Voltage

Variation with Source Current

0

STC3116E

Ver 1.0

Crss

Coss

Ciss

500

400

300

200

100

10

15

20

25

30

0

5

110

100

10

100

1000

5000

300

250

200

150

100

50

0

68

10

0

4

2

20.0

10.0

1.0

0

0.4

0.8

1.2

1.6

2.0

5.0

25 C

125 C

75 C

10

8

6

4

2

0

V DS = 15V

ID=1A

VDS=15V,ID=1A

VGS=10V

TD(on)

Tr

TD(off )

125 C

ID=1A

25 C

75 C

3

24

1

0

30

10

1

0.1

150

30

10

Tf

V GS =10V

Single P uls e

T A=25 C

R

DS

(O

N)

Lim

it

10

0us

1m

s

10m

s

10

0m

s

10s

DC

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STC3116E Fiches technique(PDF) 4 Page - SamHop Microelectronics Corp.

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