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DZTA92 Datasheet(Fiches technique) 1 Page - Diodes Incorporated

Numéro de pièce DZTA92
Description  PNP SURFACE MOUNT TRANSISTOR
Télécharger  4 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DZTA92 Datasheet(HTML) 1 Page - Diodes Incorporated

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DS30521 Rev. 4 - 2
1 of 4
www.diodes.com
DZTA92
© Diodes Incorporated
DZTA92
PNP SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (DZTA42)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
2
3
4
1
SOT-223
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C
C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-300
V
Collector-Emitter Voltage
VCEO
-300
V
Emitter-Base Voltage
VEBO
-5
V
Base Current
IB
-100
mA
Continuous Collector Current
IC
-500
mA
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation @ TA = 25°C (Note 3)
Pd
1
W
Thermal Resistance, Junction to Ambient @ TA = 25°C (Note 3)
RθJA
125
οC/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
-300
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-300
V
IC = -1mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5
V
IE = -100μA, IC = 0
Collector-Base Cut-Off Current
ICBO
-0.25
μA
VCB = -200V, IE = 0
Emitter-Base Cut-Off Current
IEBO
-0.1
μA
VEB = -3V, IC = 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
VCE(SAT)
-0.5
V
IC = -20mA, IB = -2mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.9
V
IC = -20mA, IB = -2mA
25
IC = -1mA, VCE = -10V
40
IC = -10mA, VCE = -10V
DC Current Gain
hFE
25
V
IC = -30mA, VCE = -10V
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
fT
50
MHz
IC = -10mA, VCE = -20V, f = 100MHz
Output Capacitance
Cobo
6
pF
VCB = -20V, f = 1MHz
Notes:
1.
No purposefully added lead.
2.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3.
Device mounted on FR-4 PCB, 1“ x 0.85” x 0.052”; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4.
Measured under pulsed conditions. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< = 2%


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