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TSG40N120CEC0 Fiches technique(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSG40N120CEC0 Fiches technique(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 10 page TSG40N120CE N-Channel IGBT with FRD. 1/10 Version: B12 TO-264 PRODUCT SUMMARY VCES (V) VGES (V) IC (A) 1200 ±20 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. Features ● 1200V NPT Trench Technology ● High Speed Switching ● Low Conduction Loss Block Diagram NPT Trench IGBT Ordering Information Part No. Package Packing TSG40N120CE C0 TO-264 25pcs / Tube Absolute Maximum Rating (TA=25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES ±20 V Continuous Current TC=25 oC IC 64 A TC=100 oC 40 A Pulsed Collector Current * ICM 120 A Diode Forward Current (TC=100 ) ℃ IF 40 A Diode Pulse Forward Current IFM 240 A Max Power Dissipation TJ=25 oC PD 208 W TJ=100 oC 83 Operating Junction Temperature TJ -55 to +150 ºC Storage Temperature Range TSTG -55 to +150 oC * Repetitive rating: Pulse width limited by max. junction temperature Pin Definition: 1. Gate 2. Collector 3. Emitter |
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