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TS9011ACXRFG Fiches technique(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS9011ACXRFG Fiches technique(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 7 page TS9011 Taiwan Semiconductor Document Number: DS_P0000182 2 Version: G15 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise specified) (Note 1) PARAMETER SYMBOL LIMIT UNIT Input Supply Voltage VIN 12 V Output Current IOUT 250 mA Power Dissipation SOT-23 PD 0.30 W SOT-89 0.50 Operating Ambient Temperature TOPR -40 ~ +85 oC Junction Temperature Range TJ -40 ~ +150 oC Storage Temperature Range TSTG -65 ~ +150 oC THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Thermal Resistance - Junction to Ambient SOT-23 RӨJA 333 oC/W SOT-89 200 Note: Measured with FR4 4-layer board having thermal via holes ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise specified) PARAMETER CONDITION MIN TYP MAX UNIT Output Voltage VIN=Vo + 1V, Io =40mA, TS90115 4.90 5.0 5.10 V TS9011S 3.23 3.3 3.36 TS9011P 2.94 3.0 3.06 TS9011K 2.45 2.5 2.55 TS9011D 1.76 1.8 1.83 TS9011A 1.47 1.5 1.53 Maximum Output Current VIN=Vo+1V, 250 -- -- mA Input Stability VO+1V Vin VO+2V, Io=1mA -- 0.2 0.3 % Load Regulation (Note1) VIN=Vo+1V, 1mA I L100mA TS90115 -- 40 80 mV TS9011S VIN=Vo+1V, 1mA I L80mA TS9011P -- 40 90 TS9011K TS9011D TS9011A Dropout Voltage (Note 2) Io=250mA TS90115 -- 400 600 mV Io=200mA TS9011S -- 400 650 Io=160mA TS9011P -- 400 700 Io=160mA TS9011K -- 400 700 Io=120mA TS9011D -- 400 750 Io=100mA TS9011A -- 850 1000 Quiescent Current VIN=Vo+1V, Io=0A -- 2 5 µA Output Current Limit VOUT < 0.4V -- 400 -- mA Power Supply Rejection Ratio At f=100KHz, Io=10mA, -- 30 -- dB Output Voltage Temperature Coefficient (Note 3) -- 100 -- ppm/ oC Note: 1. Regulation is measured at constant junction temperature, using pulsed ON time. 2. Dropout is measured at constant junction temperature, using pulsed ON time, and the criterion is VOUT inside target value +/-2%. 3. Guaranteed by design. |
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