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1N4006G Fiches technique(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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1N4006G Fiches technique(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page CREAT BY ART - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test VRRM 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) A Cj pF RθJA OC/W TJ OC TSTG OC Note1: Pulse Test with PW=300μs, 1% Duty Cycle Note2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS_D1405008 Version: M14 MECHANICAL DATA Case: DO-204AL (DO-41) DO-204AL (DO-41) Weight: 0.33 g (approximately) 1N4001G thru 1N4007G Glass Passivated Rectifiers FEATURES - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Taiwan Semiconductor 1.0 MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL 1N 4001G 1N 4002G 1N 4003G 1N 4004G 1N 4005G 1N 4006G UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 1 1N 4007G V Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR μA Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Maximum instantaneous forward voltage (Note 1) @ 1 A VF - 55 to +150 5 100 Operating junction temperature range Storage temperature range - 55 to +150 Typical junction capacitance (Note 2) 10 Typical thermal resistance 80 |
Numéro de pièce similaire - 1N4006G |
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Description similaire - 1N4006G |
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