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TIP34C Fiches technique(PDF) 1 Page - KEC(Korea Electronics)

No de pièce TIP34C
Description  EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

TIP34C Fiches technique(HTML) 1 Page - KEC(Korea Electronics)

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2001. 1. 10
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP34C
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to TIP33C.
Recommended for 45W 50W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
K
A
D
B
d
P
PT
M
Q
12
3
A
15.9 MAX
MILLIMETERS
DIM
B
4.8 MAX
C
20.0 0.3
D
2.0 0.3
d
1.0+0.3/-0.25
E2.0
F1.0
G
3.3 MAX
H9.0
I4.5
J
2.0
K
1.8 MAX
L
20.5 0.5
P
5.45 0.2
Q
Φ3.2 0.2
T
0.6+0.3/-0.1
2.8
M
+_
+_
+_
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-100
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current
IC
-10
A
Base Current
IB
-3
A
Collector Power Dissipation
(Tc=25 )
PC
80
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-100V, IE=0
-
-
-10
A
Emitter Cut-off Current
IEBO
VEB=-6V, IC=0
-
-
-10
A
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=-25mA, IB=0
-100
-
-
V
DC Current Gain
hFE (Note)
VCE=-4V, IC=-2A
55
-
160
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-4A, IB=-0.4A
-
-
-1.0
V
Transition Frequency
fT
VCE=-12V, IC=-0.5A
-
20
-
MHz
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
150
-
pF
Note : hFE Classification R:55~110,
O:80~160


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