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MPS651 Fiches technique(PDF) 1 Page - KEC(Korea Electronics)

No de pièce MPS651
Description  EPITAXIAL PLANAR NPN TRANSISTOR (VOLTAGE REGULATOR RELAY RAMP DRIVER, INDUSTRIAL USE)
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

MPS651 Fiches technique(HTML) 1 Page - KEC(Korea Electronics)

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1999. 11. 30
1/3
SEMICONDUCTOR
TECHNICAL DATA
MPS651
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
VOLTAGE REGULATOR, RELAY,
RAMP DRIVER, INDUSTRIAL USE
FEATURES
High Voltage : VCEO=60V(Min.).
High Current : IC(Max.)=1A.
High Transition Frequency : fT=150MHz(Typ.).
Wide Area of Safe Operation.
Complementary to MPS751.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1
2
3
B
K
G
H
F
F
E
C
E
N
0.45 MAX
M
1.00
N
1. EMITTER
3. COLLECTOR
2. BASE
+_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=50V, IE=0
-
-
100
nA
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
-
-
100
nA
DC Current Gain
hFE(1)
VCE=2V, IC=50mA
100
-
320
hFE(2)
VCE=2V, IC=1A
30
-
-
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0
60
-
-
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=500mA, IB=50mA
-
0.15
0.5
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=500mA, IB=50mA
-
0.85
1.2
V
Transition Frequency
fT
VCE=10V, IC=50mA
-
150
-
MHz
Collector Output Capacitanc
Cob
VCB=10V, IE=0, f=1MHz
-
12
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
DC
IC
1
A
Pulse
ICP
2
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
Note : hFE(1) Classification
Y:100 200 , GR:160 320


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