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KTX302U Fiches technique(PDF) 2 Page - KEC(Korea Electronics)

No de pièce KTX302U
Description  EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTX302U Fiches technique(HTML) 2 Page - KEC(Korea Electronics)

  KTX302U Datasheet HTML 1Page - KEC(Korea Electronics) KTX302U Datasheet HTML 2Page - KEC(Korea Electronics) KTX302U Datasheet HTML 3Page - KEC(Korea Electronics) KTX302U Datasheet HTML 4Page - KEC(Korea Electronics)  
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2003. 3. 11
2/4
KTX302U
Revision No : 1
Note) hFE Classification Y:120~240, GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25 )
TRANSISTOR Q1
DIODE (SBD) D1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-50V, IE=0
-
-
-0.1
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-0.1
DC Current Gain
hFE (Note)
VCE=-6V, IC=-2
120
-
400
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-100 , IB=-10
-
-0.1
-0.3
V
Transition Frequency
fT
VCE=-10V, IC=-1
80
-
-
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1
-
4
7
Noise Figure
NF
VCE=-6V, IC=-0.1 , f=1 , Rg=10
-
1.0
10
dB
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
VF(1)
IF=1mA
-
0.22
-
V
VF(2)
IF=10mA
-
0.29
-
VF(3)
IF=100mA
-
0.38
-
VF(4)
IF=200mA
-
0.43
0.55
Reverse Current
IR
VR=30V
-
-
50
Total Capacitance
CT
VR=0, f=1
-
50
-


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Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
KTX402U EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE GENERAL PURPOSE LOW VOLTAGE HIGH SPEED SWITCHING 1  2  3  4  KEC(Korea Electronics)
KTX303U EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SWITCHING LOW VOLTAGE HIGH SPEED SWITCHING 1  2  3  4  KEC(Korea Electronics)
KTX403U EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SWITCHING LOW VOLTAGE HIGH SPEED SWITCHING 1  2  3  4  KEC(Korea Electronics)
KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE ULTRA HIGH SPEED SWITCHING 1  2  KEC(Korea Electronics)
KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE ULTRA HIGH SPEED SWITCHING 1  2  KEC(Korea Electronics)
KTX401E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE ULTRA HIGH SPEED SWITCHING 1  2  KEC(Korea Electronics)
KTX401U EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE ULTRA HIGH SPEED SWITCHING 1  2  KEC(Korea Electronics)
MA2SD30 Schottky Barrier Diodes Silicon epitaxial planar type For super high speed switching 1  2  3  Panasonic Semiconductor
HRB0103A Silicon Schottky Barrier Diode for Low Voltage High Speed Switching Rectifying 1  2  3  4  5  More Hitachi Semiconductor
HRB0103B Silicon Schottky Barrier Diode for Low Voltage High Speed Switching Rectifying 1  2  3  4  5  More Hitachi Semiconductor

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