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KTX302U Fiches technique(PDF) 1 Page - KEC(Korea Electronics)

No de pièce KTX302U
Description  EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)
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Fabricant  KEC [KEC(Korea Electronics)]
Site Internet  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTX302U Fiches technique(HTML) 1 Page - KEC(Korea Electronics)

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2003. 3. 11
1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX302U
EPITAXIAL PLANAR PNP TRANSISTOR
SCHOTTKY BARRIER TYPE DIODE
Revision No : 1
GENERAL PURPOSE APPLICATION.
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Including two(TR, Diode) devices in USV.
(Ultra Super Mini type with 5 leads)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM MILLIMETERS
A
B
D
G
USV
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
T
5
4
1.3 0.1
A1
+_
+_
+_
+_
+_
1. D ANODE
2. Q BASE
3. Q EMITTER
4. Q COLLECTOR
5. D CATHODE
1
1
1
1
1
MAXIMUM RATINGS (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
23
54
MARK SPEC
CF
Type Name
12
3
4
5
Marking
Type
KTX302U
KTX302U
Q1 hFE Rank : Y
Q1 hFE Rank : GR
Mark
CF
CH
TRANSISTOR Q1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
Collector Current
IC
-150
Emitter Current
IB
-30
Collector Power Dissipation
PC
100
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~125
DIODE (SBD) D1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
VRM
30
V
Reverse Voltage
VR
30
V
Maximum (Peak) Forward Current
IFM
300
Average Forward Current
IO
200
Surge Current (10mS)
IFSM
1
A
Junction Temperature
Tj
125
Storage Temperature Range
Tstg
-55 125


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Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
KTX402U EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE GENERAL PURPOSE LOW VOLTAGE HIGH SPEED SWITCHING 1  2  3  4  KEC(Korea Electronics)
KTX303U EPITAXIAL PLANAR PNP TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SWITCHING LOW VOLTAGE HIGH SPEED SWITCHING 1  2  3  4  KEC(Korea Electronics)
KTX403U EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE SWITCHING LOW VOLTAGE HIGH SPEED SWITCHING 1  2  3  4  KEC(Korea Electronics)
KTX301E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE ULTRA HIGH SPEED SWITCHING 1  2  KEC(Korea Electronics)
KTX301U EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE ULTRA HIGH SPEED SWITCHING 1  2  KEC(Korea Electronics)
KTX401E EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE ULTRA HIGH SPEED SWITCHING 1  2  KEC(Korea Electronics)
KTX401U EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE ULTRA HIGH SPEED SWITCHING 1  2  KEC(Korea Electronics)
MA2SD30 Schottky Barrier Diodes Silicon epitaxial planar type For super high speed switching 1  2  3  Panasonic Semiconductor
HRB0103A Silicon Schottky Barrier Diode for Low Voltage High Speed Switching Rectifying 1  2  3  4  5  More Hitachi Semiconductor
HRB0103B Silicon Schottky Barrier Diode for Low Voltage High Speed Switching Rectifying 1  2  3  4  5  More Hitachi Semiconductor

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